 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| IIIIIIIIIIIIIIIIIIIIIII I I I II I I I IIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I II I II IIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII II I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II III I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII IIII II IIIIIIIIIIIIIIIIIIIIIII IIII II IIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIII * Collector - Emitter Saturation Voltage -- VCE(sat) = 1.5 Vdc (Max) @ IC = 6.0 Adc * Collector Emitter Sustaining Voltage -- VCEO(sus) = 80 Vdc (Min) -- BD243B, BD244B VCEO(sus) = 100 Vdc (Min) -- BD243C, BD244C * High Current Gain Bandwidth Product fT = 3.0 MHz (Min) @ IC = 500 mAdc * Compact TO-220 AB Package . . . designed for use in general purpose amplifier and switching applications. THERMAL CHARACTERISTICS MAXIMUM RATINGS Thermal Resistance, Junction to Case Operating and Storage Junction Temperature Range Total Device Dissipation @ TC = 25_C Derate above 25_C Base Current Collector Current -- Continuous Peak Emitter-Base Voltage Collector-Base Voltage Collector-Emitter Voltage Characteristic Rating 80 Symbol TJ, Tstg VCEO VCB VEB PD IC IB Symbol RJC BD243B BD244B 80 80 - 65 to + 150 65 0.52 2.0 5.0 6 10 1.92 Max BD243C BD244C 100 100 Watts W/_C (c) Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data Preferred devices are Motorola recommended choices for future use and best overall value. Complementary Silicon Plastic Power Transistors SEMICONDUCTOR TECHNICAL DATA MOTOROLA REV 7 PD, POWER DISSIPATION (WATTS) 20 40 60 0 0 20 40 Figure 1. Power Derating 60 80 100 120 TC, CASE TEMPERATURE (C) _C/W Unit Adc Adc Vdc Vdc Vdc Unit _C 140 160 6 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 80 - 100 VOLTS 65 WATTS BD243B BD243C* PNP BD244B BD244C* *Motorola Preferred Device CASE 221A-06 TO-220AB Order this document by BD243B/D NPN 1 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III I I I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III I I I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III I I I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII BD243B BD243C BD244B BD244C (1) Pulse Test: Pulsewidth (2) fT = hfe * ftest ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) DYNAMIC CHARACTERISTICS ON CHARACTERISTICS (1) Small-Signal Current Gain (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 kHz) Current-Gain -- Bandwidth Product (2) (IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz) Base-Emitter On Voltage (IC = 6.0 Adc, VCE = 4.0 Vdc) Collector-Emitter Saturation Voltage (IC = 6.0 Adc, IB = 1.0 Adc) DC Current Gain (IC = 0.3 Adc, VCE = 4.0 Vdc) (IC = 3.0 Adc, VCE = 4.0 Vdc) Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) Collector Cutoff Current (VCE = 80 Vdc, VEB = 0) (VCE = 100 Vdc, VEB = 0) Collector Cutoff Current (VCE = 60 Vdc, IB = 0) Collector-Emitter Sustaining Voltage (1) (IC = 30 mAdc, IB = 0) 2 + 11 V tr, tf 10 ns DUTY CYCLE = 1.0% 25 s v 300 s, Duty Cycle v 2.0%. Characteristic VCC - 30 V RC BD243B, BD243C, BD244B, BD244C SCOPE t, TIME ( s) 0 - 9.0 V RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1 MUST BE FAST RECOVERY TYPE eg. 1N5825 USED ABOVE IB 100 mA MSD6100 USED BELOW IB 100 mA Figure 2. Switching Time Test Circuit v 51 RB -4V D1 [ [ BD243B, BD244B BD243C, BD244C BD243B, BD244B BD243C, BD244C 0.03 0.02 0.06 0.1 0.07 0.05 0.3 0.2 0.7 0.5 1.0 2.0 Motorola Bipolar Power Transistor Device Data 0.1 VCEO(sus) tr VCE(sat) VBE(on) Symbol 1.0 0.2 0.4 0.6 2.0 IC, COLLECTOR CURRENT (AMP) ICEO IEBO ICES hFE hfe fT Min 80 100 3.0 20 30 15 -- -- -- -- -- -- TJ = 25C VCC = 30 V IC/IB = 10 Max 400 400 2.0 1.5 1.0 0.7 -- -- -- -- -- -- Figure 3. Turn-On Time td @ VBE(off) = 5.0 V 4.0 Vdc Vdc Vdc -- -- mAdc mAdc Adc MHz Unit 6.0 BD243B BD243C BD244B BD244C r(t) EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 0.3 0.2 0.1 0.1 0.07 0.05 0.03 0.02 0.01 0.01 0.01 0.05 0.02 t1 SINGLE PULSE t2 SINGLE PULSE P(pk) RJC(max) = 1.92C/W D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RJC(t) D = 0.5 0.2 DUTY CYCLE, D = t1/t2 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 t, TIME OR PULSE WIDTH (ms) 20 30 50 100 200 300 500 1000 Figure 4. Thermal Response 10 5.0 IC, COLLECTOR CURRENT (AMP) 3.0 2.0 TJ = 150C 1.0 0.5 0.3 0.2 0.1 5.0 SECOND BREAKDOWN LIMITED BONDING WIRE LIMITED THERMAL LIMITATION @ TC = 25C CURVES APPLY BELOW RATED VCEO BD243B, BD244B BD243C, BD244C 10 20 60 40 80 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 100 1.0 ms 5.0 ms 0.5 ms There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on TJ(pk) = 150_C: TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) 150_C, TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. v Figure 5. Active Region Safe Operating Area 5.0 3.0 2.0 1.0 t, TIME ( s) 0.7 0.5 0.3 0.2 tf 0.1 0.07 0.05 0.06 ts TJ = 25C VCC = 30 V IC/IB = 10 IB1 = IB2 300 TJ = 25C 200 CAPACITANCE (pF) Cib 100 70 Cob 50 0.1 1.0 0.2 0.4 0.6 2.0 IC, COLLECTOR CURRENT (AMP) 4.0 6.0 30 0.5 1.0 2.0 3.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) 30 50 Figure 6. Turn-Off Time Figure 7. Capacitance Motorola Bipolar Power Transistor Device Data 3 BD243B BD243C BD244B BD244C 500 300 200 hFE, DC CURRENT GAIN 100 70 50 30 20 10 7.0 5.0 0.06 VCE = 2.0 V TJ = 150C VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 2.0 TJ = 25C 1.6 IC = 1.0 A 1.2 2.5 A 5.0 A 25C 0.8 - 55C 0.4 0.1 0.2 0.3 0.4 0.6 1.0 2.0 IC, COLLECTOR CURRENT (AMP) 4.0 6.0 0 10 20 30 50 100 200 300 IB, BASE CURRENT (mA) 500 1000 Figure 8. DC Current Gain Figure 9. Collector Saturation Region V, TEMPERATURE COEFFICIENTS (mV/C) 2.0 TJ = 25C 1.6 V, VOLTAGE (VOLTS) VBE(sat) @ IC/IB = 10 + 2.5 + 2.0 + 1.5 + 1.0 + 25C to + 150C + 0.5 0 - 0.5 - 1.0 - 1.5 - 2.0 - 2.5 0.06 0.1 0.2 0.3 0.5 1.0 VB FOR VBE + 25C to + 150C - 55C to + 25C 2.0 3.0 0.4 0.6 *VC FOR VCE(sat) - 55C to + 25C *APPLIES FOR IC/IB 5.0 1.2 0.8 VBE @ VCE = 4.0 V 0.4 VCE(sat) @ IC/IB = 10 0 0.06 0.1 0.2 0.3 0.4 0.6 1.0 2.0 3.0 4.0 6.0 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMP) Figure 10. "On" Voltages Figure 11. Temperature Coefficients 103 VCE = 30 V IC, COLLECTOR CURRENT ( A) 102 TJ = 150C 101 100 10-1 10- 2 IC = ICES REVERSE FORWARD 100C 25C RBE , EXTERNAL BASE-EMITTER RESISTANCE (OHMS) 10M VCE = 30 V 1.0M 100k 10k 1.0k 0.1k 20 40 60 80 100 120 140 160 TJ, JUNCTION TEMPERATURE (C) IC ICES IC = 10 x ICES IC = 2 x ICES (TYPICAL ICES VALUES OBTAINED FROM FIGURE 12) 10- 3 - 0.3 - 0.2 - 0.1 0 + 0.1 + 0.2 + 0.3 + 0.4 + 0.5 + 0.6 + 0.7 VBE, BASE-EMITTER VOLTAGE (VOLTS) Figure 12. Collector Cut-Off Region Figure 13. Effects of Base-Emitter Resistance 4 Motorola Bipolar Power Transistor Device Data BD243B BD243C BD244B BD244C PACKAGE DIMENSIONS -T- B 4 SEATING PLANE F T S C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 --- --- 0.080 BASE COLLECTOR EMITTER COLLECTOR MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 --- --- 2.04 Q 123 A U K H Z L V G D N R J STYLE 1: PIN 1. 2. 3. 4. CASE 221A-06 TO-220AB ISSUE Y Motorola Bipolar Power Transistor Device Data 5 BD243B BD243C BD244B BD244C Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE (602) 244-6609 INTERNET: http://Design-NET.com JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 6 Motorola Bipolar Power Transistor Device Data *BD243B/D* BD243B/D |
Price & Availability of BD243B
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |